| Authors: |
Zhu YP; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China., Chen X; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China., Liu XR; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China., Liu Y; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China., Liu P; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China., Zha H; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China., Qu G; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China., Hong C; Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, Westlake University, Hangzhou, China., Li J; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China., Jiang Z; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China., Ma XM; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China., Hao YJ; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China., Zhu MY; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China., Liu W; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China., Zeng M; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China., Jayaram S; 3rd Institute of Physics, University of Stuttgart, Stuttgart, Germany.; Center for Integrated Quantum Science and Technology (IQST), University of Stuttgart, Stuttgart, Germany.; Center for Applied Quantum Technology, University of Stuttgart, Stuttgart, Germany., Lenger M; 3rd Institute of Physics, University of Stuttgart, Stuttgart, Germany.; Center for Integrated Quantum Science and Technology (IQST), University of Stuttgart, Stuttgart, Germany.; Center for Applied Quantum Technology, University of Stuttgart, Stuttgart, Germany., Ding J; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China., Mo S; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China., Tanaka K; Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki, Japan., Arita M; Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima, Japan., Liu Z; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China., Ye M; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China., Shen D; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China., Wrachtrup J; 3rd Institute of Physics, University of Stuttgart, Stuttgart, Germany.; Center for Integrated Quantum Science and Technology (IQST), University of Stuttgart, Stuttgart, Germany.; Center for Applied Quantum Technology, University of Stuttgart, Stuttgart, Germany., Huang Y; Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China., He RH; Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, Westlake University, Hangzhou, China., Qiao S; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China. qiaoshan@mail.sim.ac.cn., Liu Q; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China. liuqh@sustech.edu.cn., Liu C; Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology (SUSTech), Shenzhen, China. liuc@sustech.edu.cn. |
