| Authors: |
Lee T; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea., Jung KS; Flash Memory Technology Design Team, Samsung Electronics Co. Ltd., Giheung, 17113, South Korea.; Department of Semiconductor and Display Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea., Seo S; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA., Lee J; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea., Park J; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea., Kang S; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea., Park J; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea., Kang J; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea., Ahn H; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea., Kim S; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea., Lee HW; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA., Lee D; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA., Kim KS; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA., Kim H; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign (UIUC), Urbana, IL, 61801, USA.; Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign (UIUC), Urbana, IL, 61801, USA., Heo K; School of Semiconductor Science & Technology, Jeonbuk National University, Jeonju, 54896, South Korea., Kim S; School of Electronics Engineering College of IT Engineering, Kyungpook National University, Daegu, 41566, South Korea., Bae SH; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Missouri, MO, 63130, USA.; Institute of Materials Science and Engineering, Washington University in Saint Louis, Missouri, MO, 63130, USA., Kang S; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea., Kang K; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.; Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea., Kim J; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA., Park JH; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea. |
