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Junctionless Negative-Differential-Resistance Device Using 2D Van-Der-Waals Layered Materials for Ternary Parallel Computing.

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Title: Junctionless Negative-Differential-Resistance Device Using 2D Van-Der-Waals Layered Materials for Ternary Parallel Computing.
Authors: Lee T; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea., Jung KS; Flash Memory Technology Design Team, Samsung Electronics Co. Ltd., Giheung, 17113, South Korea.; Department of Semiconductor and Display Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea., Seo S; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA., Lee J; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea., Park J; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea., Kang S; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea., Park J; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea., Kang J; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea., Ahn H; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea., Kim S; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea., Lee HW; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA., Lee D; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA., Kim KS; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA., Kim H; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign (UIUC), Urbana, IL, 61801, USA.; Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign (UIUC), Urbana, IL, 61801, USA., Heo K; School of Semiconductor Science & Technology, Jeonbuk National University, Jeonju, 54896, South Korea., Kim S; School of Electronics Engineering College of IT Engineering, Kyungpook National University, Daegu, 41566, South Korea., Bae SH; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Missouri, MO, 63130, USA.; Institute of Materials Science and Engineering, Washington University in Saint Louis, Missouri, MO, 63130, USA., Kang S; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea., Kang K; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.; Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea., Kim J; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA., Park JH; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.
Source: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Jun; Vol. 36 (24), pp. e2310015. Date of Electronic Publication: 2024 Mar 18.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE
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  Data: <searchLink fieldCode="AU" term="%22Lee+T%22">Lee T</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.<br /><searchLink fieldCode="AU" term="%22Jung+KS%22">Jung KS</searchLink>; Flash Memory Technology Design Team, Samsung Electronics Co. Ltd., Giheung, 17113, South Korea.; Department of Semiconductor and Display Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.<br /><searchLink fieldCode="AU" term="%22Seo+S%22">Seo S</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.<br /><searchLink fieldCode="AU" term="%22Lee+J%22">Lee J</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.<br /><searchLink fieldCode="AU" term="%22Park+J%22">Park J</searchLink>; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea.<br /><searchLink fieldCode="AU" term="%22Kang+S%22">Kang S</searchLink>; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.<br /><searchLink fieldCode="AU" term="%22Park+J%22">Park J</searchLink>; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.<br /><searchLink fieldCode="AU" term="%22Kang+J%22">Kang J</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.<br /><searchLink fieldCode="AU" term="%22Ahn+H%22">Ahn H</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.<br /><searchLink fieldCode="AU" term="%22Kim+S%22">Kim S</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.<br /><searchLink fieldCode="AU" term="%22Lee+HW%22">Lee HW</searchLink>; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.<br /><searchLink fieldCode="AU" term="%22Lee+D%22">Lee D</searchLink>; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.<br /><searchLink fieldCode="AU" term="%22Kim+KS%22">Kim KS</searchLink>; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.<br /><searchLink fieldCode="AU" term="%22Kim+H%22">Kim H</searchLink>; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign (UIUC), Urbana, IL, 61801, USA.; Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign (UIUC), Urbana, IL, 61801, USA.<br /><searchLink fieldCode="AU" term="%22Heo+K%22">Heo K</searchLink>; School of Semiconductor Science & Technology, Jeonbuk National University, Jeonju, 54896, South Korea.<br /><searchLink fieldCode="AU" term="%22Kim+S%22">Kim S</searchLink>; School of Electronics Engineering College of IT Engineering, Kyungpook National University, Daegu, 41566, South Korea.<br /><searchLink fieldCode="AU" term="%22Bae+SH%22">Bae SH</searchLink>; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Missouri, MO, 63130, USA.; Institute of Materials Science and Engineering, Washington University in Saint Louis, Missouri, MO, 63130, USA.<br /><searchLink fieldCode="AU" term="%22Kang+S%22">Kang S</searchLink>; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea.<br /><searchLink fieldCode="AU" term="%22Kang+K%22">Kang K</searchLink>; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.; Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.<br /><searchLink fieldCode="AU" term="%22Kim+J%22">Kim J</searchLink>; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02138, USA.<br /><searchLink fieldCode="AU" term="%22Park+JH%22">Park JH</searchLink>; Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.
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