| Authors: |
Liu HT; International College of Semiconductor Technology, Hsinchu 300093, Taiwan.; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chen WH; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chang SJ; CREDM, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan., Yang CC; National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan., Wang CH; National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan., Liu WT; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chen KY; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Kawakami N; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Lin KB; International College of Semiconductor Technology, Hsinchu 300093, Taiwan., Lin CL; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Hu C; International College of Semiconductor Technology, Hsinchu 300093, Taiwan.; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States. |
