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Growth Behavior of Ni on Hydrogen-Etched WS2 Surface.

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Title: Growth Behavior of Ni on Hydrogen-Etched WS2 Surface.
Authors: Liu HT; International College of Semiconductor Technology, Hsinchu 300093, Taiwan.; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chen WH; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chang SJ; CREDM, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan., Yang CC; National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan., Wang CH; National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan., Liu WT; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chen KY; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Kawakami N; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Lin KB; International College of Semiconductor Technology, Hsinchu 300093, Taiwan., Lin CL; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Hu C; International College of Semiconductor Technology, Hsinchu 300093, Taiwan.; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Oct 16; Vol. 16 (41), pp. 56336-56342. Date of Electronic Publication: 2024 Oct 07.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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PubType: Academic Journal
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  Data: Growth Behavior of Ni on Hydrogen-Etched WS<subscript>2</subscript> Surface.
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  Data: <searchLink fieldCode="AU" term="%22Liu+HT%22">Liu HT</searchLink>; International College of Semiconductor Technology, Hsinchu 300093, Taiwan.; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Chen+WH%22">Chen WH</searchLink>; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Chang+SJ%22">Chang SJ</searchLink>; CREDM, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan.<br /><searchLink fieldCode="AU" term="%22Yang+CC%22">Yang CC</searchLink>; National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan.<br /><searchLink fieldCode="AU" term="%22Wang+CH%22">Wang CH</searchLink>; National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan.<br /><searchLink fieldCode="AU" term="%22Liu+WT%22">Liu WT</searchLink>; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Chen+KY%22">Chen KY</searchLink>; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Kawakami+N%22">Kawakami N</searchLink>; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Lin+KB%22">Lin KB</searchLink>; International College of Semiconductor Technology, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Lin+CL%22">Lin CL</searchLink>; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.<br /><searchLink fieldCode="AU" term="%22Hu+C%22">Hu C</searchLink>; International College of Semiconductor Technology, Hsinchu 300093, Taiwan.; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States.
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  Data: <searchLink fieldCode="JN" term="%22101504991%22">ACS applied materials & interfaces</searchLink> [ACS Appl Mater Interfaces] 2024 Oct 16; Vol. 16 (41), pp. 56336-56342. <i>Date of Electronic Publication: </i>2024 Oct 07.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101504991 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1944-8252 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219448244%22">19448244 </searchLink><i>NLM ISO Abbreviation: </i>ACS Appl Mater Interfaces <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=39374169
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      – Type: doi
        Value: 10.1021/acsami.4c11506
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      – Code: eng
        Text: English
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      – TitleFull: Growth Behavior of Ni on Hydrogen-Etched WS2 Surface.
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              Text: 2024 Oct 16
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