Growth Behavior of Ni on Hydrogen-Etched WS2 Surface.

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Bibliographic Details
Title: Growth Behavior of Ni on Hydrogen-Etched WS2 Surface.
Authors: Liu HT; International College of Semiconductor Technology, Hsinchu 300093, Taiwan.; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chen WH; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chang SJ; CREDM, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan., Yang CC; National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan., Wang CH; National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan., Liu WT; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Chen KY; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Kawakami N; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Lin KB; International College of Semiconductor Technology, Hsinchu 300093, Taiwan., Lin CL; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan., Hu C; International College of Semiconductor Technology, Hsinchu 300093, Taiwan.; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Oct 16; Vol. 16 (41), pp. 56336-56342. Date of Electronic Publication: 2024 Oct 07.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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