Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs.

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Title: Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs.
Authors: Guan X; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China.; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Li Y; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Meng Y; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Wang K; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China., Lin K; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Luo Y; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China., Wang J; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China., Duan Z; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China., Liu H; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China., Yang L; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Zheng L; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Lin J; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Weng Y; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Xie F; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China. xiefengxian@fudan.edu.cn., Lu J; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China. jianxun.lu@kaust.edu.sa.; Division of Physical Science and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology, Thuwal, Kingdom of Saudi Arabia. jianxun.lu@kaust.edu.sa., Wei Z; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China. weizhanhua@hqu.edu.cn.
Source: Nature communications [Nat Commun] 2024 Nov 15; Vol. 15 (1), pp. 9913. Date of Electronic Publication: 2024 Nov 15.
Publication Type: Journal Article
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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ISSN:2041-1723
DOI:10.1038/s41467-024-54160-x