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Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs.

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Title: Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs.
Authors: Guan X; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China.; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Li Y; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Meng Y; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Wang K; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China., Lin K; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Luo Y; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China., Wang J; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China., Duan Z; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China., Liu H; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China., Yang L; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Zheng L; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Lin J; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Weng Y; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China., Xie F; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China. xiefengxian@fudan.edu.cn., Lu J; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China. jianxun.lu@kaust.edu.sa.; Division of Physical Science and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology, Thuwal, Kingdom of Saudi Arabia. jianxun.lu@kaust.edu.sa., Wei Z; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China. weizhanhua@hqu.edu.cn.
Source: Nature communications [Nat Commun] 2024 Nov 15; Vol. 15 (1), pp. 9913. Date of Electronic Publication: 2024 Nov 15.
Publication Type: Journal Article
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs.
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  Data: <searchLink fieldCode="AU" term="%22Guan+X%22">Guan X</searchLink>; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China.; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China.<br /><searchLink fieldCode="AU" term="%22Li+Y%22">Li Y</searchLink>; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China.<br /><searchLink fieldCode="AU" term="%22Meng+Y%22">Meng Y</searchLink>; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China.<br /><searchLink fieldCode="AU" term="%22Wang+K%22">Wang K</searchLink>; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China.<br /><searchLink fieldCode="AU" term="%22Lin+K%22">Lin K</searchLink>; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China.<br /><searchLink fieldCode="AU" term="%22Luo+Y%22">Luo Y</searchLink>; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China.<br /><searchLink fieldCode="AU" term="%22Wang+J%22">Wang J</searchLink>; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China.<br /><searchLink fieldCode="AU" term="%22Duan+Z%22">Duan Z</searchLink>; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China.<br /><searchLink fieldCode="AU" term="%22Liu+H%22">Liu H</searchLink>; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China.<br /><searchLink fieldCode="AU" term="%22Yang+L%22">Yang L</searchLink>; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China.<br /><searchLink fieldCode="AU" term="%22Zheng+L%22">Zheng L</searchLink>; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China.<br /><searchLink fieldCode="AU" term="%22Lin+J%22">Lin J</searchLink>; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China.<br /><searchLink fieldCode="AU" term="%22Weng+Y%22">Weng Y</searchLink>; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China.<br /><searchLink fieldCode="AU" term="%22Xie+F%22">Xie F</searchLink>; Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China. xiefengxian@fudan.edu.cn.<br /><searchLink fieldCode="AU" term="%22Lu+J%22">Lu J</searchLink>; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China. jianxun.lu@kaust.edu.sa.; Division of Physical Science and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology, Thuwal, Kingdom of Saudi Arabia. jianxun.lu@kaust.edu.sa.<br /><searchLink fieldCode="AU" term="%22Wei+Z%22">Wei Z</searchLink>; Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China. weizhanhua@hqu.edu.cn.
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  Data: <searchLink fieldCode="JN" term="%22101528555%22">Nature communications</searchLink> [Nat Commun] 2024 Nov 15; Vol. 15 (1), pp. 9913. <i>Date of Electronic Publication: </i>2024 Nov 15.
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        Value: 10.1038/s41467-024-54160-x
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      – TitleFull: Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs.
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