| Authors: |
Kim MJ; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Bang SW; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Hur JS; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Yoon SH; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Choi CH; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Chung SW; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Oh JE; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Kim Y; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Park BJ; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Lee J; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Yang H; Department of Chemical Engineering, Inha University, Incheon, 22212, Republic of Korea., Ha D; Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea., Cho MH; Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea., Jeong JK; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea. |
