Fabrication of high-performance tin halide perovskite thin-film transistors via chemical solution-based composition engineering.

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Bibliographic Details
Title: Fabrication of high-performance tin halide perovskite thin-film transistors via chemical solution-based composition engineering.
Authors: Zhu H; Institute of Fundamental and Frontier Sciences, School of Physics, State Key Laboratory of Electronic Thin Films and Integrated Devices, Key Laboratory of Quantum Physics and Photonic Quantum Information of the Ministry of Education, University of Electronic Science and Technology of China, Chengdu, China. hhzhu@uestc.edu.cn., Reo Y; Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea., Park G; Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea., Yang W; Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea., Liu A; Institute of Fundamental and Frontier Sciences, School of Physics, State Key Laboratory of Electronic Thin Films and Integrated Devices, Key Laboratory of Quantum Physics and Photonic Quantum Information of the Ministry of Education, University of Electronic Science and Technology of China, Chengdu, China. ao.liu@uestc.edu.cn., Noh YY; Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea. yynoh@postech.ac.kr.
Source: Nature protocols [Nat Protoc] 2025 Jul; Vol. 20 (7), pp. 1915-1929. Date of Electronic Publication: 2025 Jan 15.
Publication Type: Journal Article; Review; Research Support, Non-U.S. Gov't
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101284307 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1750-2799 (Electronic) Linking ISSN: 17502799 NLM ISO Abbreviation: Nat Protoc Subsets: MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1750-2799
DOI:10.1038/s41596-024-01101-z