| Authors: |
Zhang J; Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.; Institute of Electrical and Micro Engineering, EPFL, Lausanne, Switzerland., Wang C; Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.; Institute of Electrical and Micro Engineering, EPFL, Lausanne, Switzerland., Denney C; Departement of Electrical Engineering, Colorado School of Mines, Golden, CO, USA., Riemensberger J; Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.; Institute of Electrical and Micro Engineering, EPFL, Lausanne, Switzerland.; Department of Electronic Systems, Norwegian University of Science and Technology, Trondheim, Norway., Lihachev G; Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.; Institute of Electrical and Micro Engineering, EPFL, Lausanne, Switzerland., Hu J; Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.; Institute of Electrical and Micro Engineering, EPFL, Lausanne, Switzerland., Kao W; Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.; Institute of Electrical and Micro Engineering, EPFL, Lausanne, Switzerland., Blésin T; Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.; Institute of Electrical and Micro Engineering, EPFL, Lausanne, Switzerland., Kuznetsov N; Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.; Institute of Electrical and Micro Engineering, EPFL, Lausanne, Switzerland., Li Z; Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.; Institute of Electrical and Micro Engineering, EPFL, Lausanne, Switzerland., Churaev M; Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.; Institute of Electrical and Micro Engineering, EPFL, Lausanne, Switzerland., Ou X; State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China. ouxin@mail.sim.ac.cn., Santamaria-Botello G; Departement of Electrical Engineering, Colorado School of Mines, Golden, CO, USA. gabriel.santamariabotello@mines.edu., Kippenberg TJ; Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland. tobias.kippenberg@epfl.ch.; Institute of Electrical and Micro Engineering, EPFL, Lausanne, Switzerland. tobias.kippenberg@epfl.ch. |
