APA (7th ed.) Citation

S, O., C, H., VK, D., J, K., Y, H., & JH, K. (2025). Ultimate Scaling of the Metal-MoS2 Interface Achieving High Performance Nanoscale Schottky Diodes via Conductive Atomic Force Microscopy. Small (Weinheim an der Bergstrasse, Germany), 21(32), e2411380. https://doi.org/10.1002/smll.202411380

Chicago Style (17th ed.) Citation

S, Oh, Hong C, Dat VK, Kim J, Heo Y, and Kim JH. "Ultimate Scaling of the Metal-MoS2 Interface Achieving High Performance Nanoscale Schottky Diodes via Conductive Atomic Force Microscopy." Small (Weinheim an Der Bergstrasse, Germany) 21, no. 32 (2025): e2411380. https://doi.org/10.1002/smll.202411380.

MLA (9th ed.) Citation

S, Oh, et al. "Ultimate Scaling of the Metal-MoS2 Interface Achieving High Performance Nanoscale Schottky Diodes via Conductive Atomic Force Microscopy." Small (Weinheim an Der Bergstrasse, Germany), vol. 21, no. 32, 2025, p. e2411380, https://doi.org/10.1002/smll.202411380.