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Ultimate Scaling of the Metal-MoS2 Interface Achieving High Performance Nanoscale Schottky Diodes via Conductive Atomic Force Microscopy.

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Title: Ultimate Scaling of the Metal-MoS2 Interface Achieving High Performance Nanoscale Schottky Diodes via Conductive Atomic Force Microscopy.
Authors: Oh S; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Hong C; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Dat VK; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Kim J; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Heo Y; Department of Physics, Inha University, Incheon, 22212, Republic of Korea., Kim JH; Department of Physics, Pusan National University, Busan, 46241, Republic of Korea.
Source: Small (Weinheim an der Bergstrasse, Germany) [Small] 2025 Aug; Vol. 21 (32), pp. e2411380. Date of Electronic Publication: 2025 Apr 08.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 101235338 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1613-6829 (Electronic) Linking ISSN: 16136810 NLM ISO Abbreviation: Small Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Ultimate Scaling of the Metal-MoS<subscript>2</subscript> Interface Achieving High Performance Nanoscale Schottky Diodes via Conductive Atomic Force Microscopy.
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  Data: <searchLink fieldCode="AU" term="%22Oh+S%22">Oh S</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hong+C%22">Hong C</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Dat+VK%22">Dat VK</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+J%22">Kim J</searchLink>; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Heo+Y%22">Heo Y</searchLink>; Department of Physics, Inha University, Incheon, 22212, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+JH%22">Kim JH</searchLink>; Department of Physics, Pusan National University, Busan, 46241, Republic of Korea.
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  Data: <searchLink fieldCode="JN" term="%22101235338%22">Small (Weinheim an der Bergstrasse, Germany)</searchLink> [Small] 2025 Aug; Vol. 21 (32), pp. e2411380. <i>Date of Electronic Publication: </i>2025 Apr 08.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Wiley-VCH%22">Wiley-VCH </searchLink><i>Country of Publication: </i>Germany <i>NLM ID: </i>101235338 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1613-6829 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2216136810%22">16136810 </searchLink><i>NLM ISO Abbreviation: </i>Small <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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        Value: 10.1002/smll.202411380
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        Text: English
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      – TitleFull: Ultimate Scaling of the Metal-MoS2 Interface Achieving High Performance Nanoscale Schottky Diodes via Conductive Atomic Force Microscopy.
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            NameFull: Hong C
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              Text: 2025 Aug
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