Ultimate Scaling of the Metal-MoS2 Interface Achieving High Performance Nanoscale Schottky Diodes via Conductive Atomic Force Microscopy.

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Bibliographic Details
Title: Ultimate Scaling of the Metal-MoS2 Interface Achieving High Performance Nanoscale Schottky Diodes via Conductive Atomic Force Microscopy.
Authors: Oh S; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Hong C; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Dat VK; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Kim J; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Heo Y; Department of Physics, Inha University, Incheon, 22212, Republic of Korea., Kim JH; Department of Physics, Pusan National University, Busan, 46241, Republic of Korea.
Source: Small (Weinheim an der Bergstrasse, Germany) [Small] 2025 Aug; Vol. 21 (32), pp. e2411380. Date of Electronic Publication: 2025 Apr 08.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 101235338 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1613-6829 (Electronic) Linking ISSN: 16136810 NLM ISO Abbreviation: Small Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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