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Design and Simulation of advanced boron-doped GaN cap layer on AlGaN/GaN MOSHEMTs for enhanced label-free biosensing applications.

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Title: Design and Simulation of advanced boron-doped GaN cap layer on AlGaN/GaN MOSHEMTs for enhanced label-free biosensing applications.
Authors: Hemalatha RG; Department of Electrical, Electronics and Communication Engineering, School of Technology, Gandhi Institute of Technology and Management (GITAM), Bengaluru, 561203, Karnataka, India.; Department of Electronics and Communication Engineering, Kishkinda University, Ballari, 583103, Karnataka, India., Kumar MA; Department of Electrical, Electronics and Communication Engineering, School of Technology, Gandhi Institute of Technology and Management (GITAM), Bengaluru, 561203, Karnataka, India. manokavi2011@gmail.com., Mishra GS; Department of Electrical, Electronics and Communication Engineering, School of Technology, Gandhi Institute of Technology and Management (GITAM), Bengaluru, 561203, Karnataka, India., N M; Symbiosis Institute of Technology, Nagpur Campus, Symbiosis International (Deemed University), Pune, India., Ismail KBM; Department of Electronics and Communication Engineering, Agni College of Technology, Chennai, Tamil Nadu, 600130, India., Mahalingam S; Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea., Kim J; Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea. junghwan.kim@pknu.ac.kr.; Department of Materials System Engineering, Pukyong National University, Busan, 48513, Republic of Korea. junghwan.kim@pknu.ac.kr.
Source: Biomedical microdevices [Biomed Microdevices] 2025 Apr 21; Vol. 27 (2), pp. 19. Date of Electronic Publication: 2025 Apr 21.
Publication Type: Journal Article
Journal Info: Publisher: Springer US Country of Publication: United States NLM ID: 100887374 Publication Model: Electronic Cited Medium: Internet ISSN: 1572-8781 (Electronic) Linking ISSN: 13872176 NLM ISO Abbreviation: Biomed Microdevices Subsets: MEDLINE
Database: MEDLINE Ultimate
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  Availability: 1
Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 40257624
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Design and Simulation of advanced boron-doped GaN cap layer on AlGaN/GaN MOSHEMTs for enhanced label-free biosensing applications.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Hemalatha+RG%22">Hemalatha RG</searchLink>; Department of Electrical, Electronics and Communication Engineering, School of Technology, Gandhi Institute of Technology and Management (GITAM), Bengaluru, 561203, Karnataka, India.; Department of Electronics and Communication Engineering, Kishkinda University, Ballari, 583103, Karnataka, India.<br /><searchLink fieldCode="AU" term="%22Kumar+MA%22">Kumar MA</searchLink>; Department of Electrical, Electronics and Communication Engineering, School of Technology, Gandhi Institute of Technology and Management (GITAM), Bengaluru, 561203, Karnataka, India. manokavi2011@gmail.com.<br /><searchLink fieldCode="AU" term="%22Mishra+GS%22">Mishra GS</searchLink>; Department of Electrical, Electronics and Communication Engineering, School of Technology, Gandhi Institute of Technology and Management (GITAM), Bengaluru, 561203, Karnataka, India.<br /><searchLink fieldCode="AU" term="%22N+M%22">N M</searchLink>; Symbiosis Institute of Technology, Nagpur Campus, Symbiosis International (Deemed University), Pune, India.<br /><searchLink fieldCode="AU" term="%22Ismail+KBM%22">Ismail KBM</searchLink>; Department of Electronics and Communication Engineering, Agni College of Technology, Chennai, Tamil Nadu, 600130, India.<br /><searchLink fieldCode="AU" term="%22Mahalingam+S%22">Mahalingam S</searchLink>; Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+J%22">Kim J</searchLink>; Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea. junghwan.kim@pknu.ac.kr.; Department of Materials System Engineering, Pukyong National University, Busan, 48513, Republic of Korea. junghwan.kim@pknu.ac.kr.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22100887374%22">Biomedical microdevices</searchLink> [Biomed Microdevices] 2025 Apr 21; Vol. 27 (2), pp. 19. <i>Date of Electronic Publication: </i>2025 Apr 21.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Springer+US%22">Springer US </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>100887374 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1572-8781 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2213872176%22">13872176 </searchLink><i>NLM ISO Abbreviation: </i>Biomed Microdevices <i>Subsets: </i>MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=40257624
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10544-025-00746-1
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: 19
    Titles:
      – TitleFull: Design and Simulation of advanced boron-doped GaN cap layer on AlGaN/GaN MOSHEMTs for enhanced label-free biosensing applications.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Hemalatha RG
      – PersonEntity:
          Name:
            NameFull: Kumar MA
      – PersonEntity:
          Name:
            NameFull: Mishra GS
      – PersonEntity:
          Name:
            NameFull: N M
      – PersonEntity:
          Name:
            NameFull: Ismail KBM
      – PersonEntity:
          Name:
            NameFull: Mahalingam S
      – PersonEntity:
          Name:
            NameFull: Kim J
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 21
              M: 04
              Text: 2025 Apr 21
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-electronic
              Value: 1572-8781
          Numbering:
            – Type: volume
              Value: 27
            – Type: issue
              Value: 2
          Titles:
            – TitleFull: Biomedical microdevices
              Type: main
ResultId 1