Electrical Performance and Deep-Level Trap Characterization of p-CuGaO2/β-Ga2O3 Heterojunctions for Power Electronics.

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Title: Electrical Performance and Deep-Level Trap Characterization of p-CuGaO2/β-Ga2O3 Heterojunctions for Power Electronics.
Authors: Venkata Prasad C; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea., Lee GH; Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea., Park JH; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea., Shaikshavali D; Electronics and Communication Engineering, QIS College of Engineering and Technology, Vegamukkapalem, Ongole, Andhra Pradesh 523272, India., Kim KJ; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea., Jeon HJ; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea., Jaiswal NK; Centre for Industrial Electronics, Institute of Mechanical and Electrical Engineering, University of Southern Denmark, Alison 2, Sønderborg 6400, Denmark., Yu MG; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea., Labed M; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea., Koo SM; Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea., Rim YS; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2025 Jul 23; Vol. 17 (29), pp. 42066-42081. Date of Electronic Publication: 2025 Jul 08.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1944-8252
DOI:10.1021/acsami.5c04297