Initial Growth Mechanism and Microstructural Evolution of Sub-10 nm Hydrogenated Amorphous Silicon Films.

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Title: Initial Growth Mechanism and Microstructural Evolution of Sub-10 nm Hydrogenated Amorphous Silicon Films.
Authors: Lee JY; Department of Physics, Chungbuk National University, Cheongju 28644, South Korea., An JH; Ulsan Advanced Energy Technology R&D Center, Korea Institute of Energy Research, Ulsan 44776, South Korea.; Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea., Sim SW; Department of Physics, Chungbuk National University, Cheongju 28644, South Korea.; Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon 34129, South Korea., Kim DH; Department of Physics, Chungbuk National University, Cheongju 28644, South Korea.; Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon 34129, South Korea., Kim Y; Department of Physics, Chungbuk National University, Cheongju 28644, South Korea., Han YT; Department of Physics, Chungbuk National University, Cheongju 28644, South Korea.; Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon 34129, South Korea., Park SM; Department of Physics, Chungbuk National University, Cheongju 28644, South Korea., Lee SH; Department of Physics, Chungbuk National University, Cheongju 28644, South Korea., Seong KJ; Department of Physics, Chungbuk National University, Cheongju 28644, South Korea.; Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon 34129, South Korea., Oh SJ; Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea., Lee J; Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung 18448, South Korea., Song HE; Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon 34129, South Korea., Oh JH; Ulsan Advanced Energy Technology R&D Center, Korea Institute of Energy Research, Ulsan 44776, South Korea., Kim KH; Department of Physics, Chungbuk National University, Cheongju 28644, South Korea.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2025 Aug 27; Vol. 17 (34), pp. 49049-49057. Date of Electronic Publication: 2025 Aug 19.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1944-8252
DOI:10.1021/acsami.5c13561