Temperature-induced interfacial intermixing and trap modulation in ONO-based flash memory capacitors.

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Bibliographic Details
Title: Temperature-induced interfacial intermixing and trap modulation in ONO-based flash memory capacitors.
Authors: Son H; Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea., Sim K; Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea., Hwang HC; National NanoFab Center, Daejeon 34141, Republic of Korea., Park H; Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.
Source: Nanotechnology [Nanotechnology] 2025 Sep 30; Vol. 36 (40). Date of Electronic Publication: 2025 Sep 30.
Publication Type: Journal Article
Journal Info: Publisher: IOP Pub Country of Publication: England NLM ID: 101241272 Publication Model: Electronic Cited Medium: Internet ISSN: 1361-6528 (Electronic) Linking ISSN: 09574484 NLM ISO Abbreviation: Nanotechnology Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1361-6528
DOI:10.1088/1361-6528/ae08bf