Change of electronic structure of ultrathin film of indium tin oxide by "In situ" Ar+ ion non-reactive successive etching process.
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| Title: | Change of electronic structure of ultrathin film of indium tin oxide by "In situ" Ar+ ion non-reactive successive etching process. |
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| Authors: | Ray SC; Department of Physics, Faculty of Engineering and Technology (ITER), Siksha 'O' Anusandhan Deemed to be University, Bhubaneswar, 751 030, Odisha, India. sekharchandraray@soa.ac.in.; Department of Physics, CSET, University of South Africa, Florida Science Campus, Private Bag X6, Florida, Christiaan de Wet and Pioneer Avenue, Florida Park, Johannesburg, 1710, South Africa. sekharchandraray@soa.ac.in., Pong WF; Department of Physics, Tamkang University, Tamsui 251, New Taipei City, Taiwan. wfpong@mail.tku.edu.tw. |
| Source: | Scientific reports [Sci Rep] 2025 Oct 27; Vol. 15 (1), pp. 37533. Date of Electronic Publication: 2025 Oct 27. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN: 2045-2322 (Electronic) Linking ISSN: 20452322 NLM ISO Abbreviation: Sci Rep Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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| ISSN: | 2045-2322 |
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| DOI: | 10.1038/s41598-025-21578-2 |
