Change of electronic structure of ultrathin film of indium tin oxide by "In situ" Ar+ ion non-reactive successive etching process.

Saved in:
Bibliographic Details
Title: Change of electronic structure of ultrathin film of indium tin oxide by "In situ" Ar+ ion non-reactive successive etching process.
Authors: Ray SC; Department of Physics, Faculty of Engineering and Technology (ITER), Siksha 'O' Anusandhan Deemed to be University, Bhubaneswar, 751 030, Odisha, India. sekharchandraray@soa.ac.in.; Department of Physics, CSET, University of South Africa, Florida Science Campus, Private Bag X6, Florida, Christiaan de Wet and Pioneer Avenue, Florida Park, Johannesburg, 1710, South Africa. sekharchandraray@soa.ac.in., Pong WF; Department of Physics, Tamkang University, Tamsui 251, New Taipei City, Taiwan. wfpong@mail.tku.edu.tw.
Source: Scientific reports [Sci Rep] 2025 Oct 27; Vol. 15 (1), pp. 37533. Date of Electronic Publication: 2025 Oct 27.
Publication Type: Journal Article
Journal Info: Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN: 2045-2322 (Electronic) Linking ISSN: 20452322 NLM ISO Abbreviation: Sci Rep Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 41145608
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Change of electronic structure of ultrathin film of indium tin oxide by "In situ" Ar<superscript>+</superscript> ion non-reactive successive etching process.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Ray+SC%22">Ray SC</searchLink>; Department of Physics, Faculty of Engineering and Technology (ITER), Siksha 'O' Anusandhan Deemed to be University, Bhubaneswar, 751 030, Odisha, India. sekharchandraray@soa.ac.in.; Department of Physics, CSET, University of South Africa, Florida Science Campus, Private Bag X6, Florida, Christiaan de Wet and Pioneer Avenue, Florida Park, Johannesburg, 1710, South Africa. sekharchandraray@soa.ac.in.<br /><searchLink fieldCode="AU" term="%22Pong+WF%22">Pong WF</searchLink>; Department of Physics, Tamkang University, Tamsui 251, New Taipei City, Taiwan. wfpong@mail.tku.edu.tw.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22101563288%22">Scientific reports</searchLink> [Sci Rep] 2025 Oct 27; Vol. 15 (1), pp. 37533. <i>Date of Electronic Publication: </i>2025 Oct 27.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Nature+Publishing+Group%22">Nature Publishing Group </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101563288 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2045-2322 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220452322%22">20452322 </searchLink><i>NLM ISO Abbreviation: </i>Sci Rep <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=41145608
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1038/s41598-025-21578-2
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: 37533
    Titles:
      – TitleFull: Change of electronic structure of ultrathin film of indium tin oxide by "In situ" Ar+ ion non-reactive successive etching process.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Ray SC
      – PersonEntity:
          Name:
            NameFull: Pong WF
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 27
              M: 10
              Text: 2025 Oct 27
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-electronic
              Value: 2045-2322
          Numbering:
            – Type: volume
              Value: 15
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Scientific reports
              Type: main
ResultId 1