Disorder Scattering Induced Large Room Temperature Nonlinear Anomalous Hall Effect in a Semiconductor CdGeAs2.

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Title: Disorder Scattering Induced Large Room Temperature Nonlinear Anomalous Hall Effect in a Semiconductor CdGeAs2.
Authors: Lee SH; 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA.; Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA., Iwaya T; Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan., Nakayama K; Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan., Lim TY; Department of Electrical and Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan., Min L; Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA.; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA., He J; Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA.; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA., Wang Y; 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA.; Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA., Gopalan V; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA., Xie Z; Department of Electrical and Computer Engineering, North Carolina Agriculture and Technical State University, Greensboro, NC, 27411, USA., Pan XC; Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai, 980-8577, Japan., Chen YP; Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai, 980-8577, Japan.; Department of Physics and Astronomy, Elmore Family School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, 47906, USA.; Institute for Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, Aarhus-C, 8000, Denmark., Chang TR; Department of Electrical and Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan.; Center for Quantum Frontiers of Research and Technology (QFort), Tainan, 70101, Taiwan.; Physics Division, National Center for Theoretical Sciences, Taipei, 10617, Taiwan., Lin H; Institute of Physics, Academia Sinica, Taipei, 115201, Taiwan., Fu L; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA., Segawa K; Department of Physics, Kyoto Sangyo University, Kyoto, 603-8555, Japan., Sato T; Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan.; Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai, 980-8577, Japan., Mao Z; 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA.; Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA.; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
Source: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2026 Feb; Vol. 38 (7), pp. e14217. Date of Electronic Publication: 2025 Nov 23.
Publication Type: Journal Article
Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1521-4095
DOI:10.1002/adma.202514217