Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC.
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| Title: | Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC. |
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| Authors: | Shen Y; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China.; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China., Qi X; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China., Li Y; School of Energy and Environmental Engineering, University of Science and Technology Beijing, Beijing, China., Guo Y; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China., Huang Q; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China., Dai W; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China. daiwen@nimte.ac.cn., Yuan Q; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China., Gu L; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China., Ding C; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China., Chen WJ; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China., Yang M; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China., Jia Z; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China., Lin CT; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China., Jiang N; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China., Sun F; School of Energy and Environmental Engineering, University of Science and Technology Beijing, Beijing, China., Zhang QJ; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China., Ma HP; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China. hpma@fudan.edu.cn.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China. hpma@fudan.edu.cn.; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China. hpma@fudan.edu.cn. |
| Source: | Nature communications [Nat Commun] 2025 Nov 28; Vol. 16 (1), pp. 10723. Date of Electronic Publication: 2025 Nov 28. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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| ISSN: | 2041-1723 |
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| DOI: | 10.1038/s41467-025-65750-8 |
