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Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC.

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Title: Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC.
Authors: Shen Y; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China.; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China., Qi X; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China., Li Y; School of Energy and Environmental Engineering, University of Science and Technology Beijing, Beijing, China., Guo Y; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China., Huang Q; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China., Dai W; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China. daiwen@nimte.ac.cn., Yuan Q; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China., Gu L; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China., Ding C; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China., Chen WJ; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China., Yang M; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China., Jia Z; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China., Lin CT; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China., Jiang N; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China., Sun F; School of Energy and Environmental Engineering, University of Science and Technology Beijing, Beijing, China., Zhang QJ; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China., Ma HP; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China. hpma@fudan.edu.cn.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China. hpma@fudan.edu.cn.; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China. hpma@fudan.edu.cn.
Source: Nature communications [Nat Commun] 2025 Nov 28; Vol. 16 (1), pp. 10723. Date of Electronic Publication: 2025 Nov 28.
Publication Type: Journal Article
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE
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  Data: Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC.
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  Data: <searchLink fieldCode="AU" term="%22Shen+Y%22">Shen Y</searchLink>; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China.; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China.<br /><searchLink fieldCode="AU" term="%22Qi+X%22">Qi X</searchLink>; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.<br /><searchLink fieldCode="AU" term="%22Li+Y%22">Li Y</searchLink>; School of Energy and Environmental Engineering, University of Science and Technology Beijing, Beijing, China.<br /><searchLink fieldCode="AU" term="%22Guo+Y%22">Guo Y</searchLink>; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.<br /><searchLink fieldCode="AU" term="%22Huang+Q%22">Huang Q</searchLink>; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.<br /><searchLink fieldCode="AU" term="%22Dai+W%22">Dai W</searchLink>; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China. daiwen@nimte.ac.cn.<br /><searchLink fieldCode="AU" term="%22Yuan+Q%22">Yuan Q</searchLink>; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China.<br /><searchLink fieldCode="AU" term="%22Gu+L%22">Gu L</searchLink>; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China.<br /><searchLink fieldCode="AU" term="%22Ding+C%22">Ding C</searchLink>; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.<br /><searchLink fieldCode="AU" term="%22Chen+WJ%22">Chen WJ</searchLink>; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China.<br /><searchLink fieldCode="AU" term="%22Yang+M%22">Yang M</searchLink>; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China.<br /><searchLink fieldCode="AU" term="%22Jia+Z%22">Jia Z</searchLink>; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China.<br /><searchLink fieldCode="AU" term="%22Lin+CT%22">Lin CT</searchLink>; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China.<br /><searchLink fieldCode="AU" term="%22Jiang+N%22">Jiang N</searchLink>; State Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Ningbo, China.<br /><searchLink fieldCode="AU" term="%22Sun+F%22">Sun F</searchLink>; School of Energy and Environmental Engineering, University of Science and Technology Beijing, Beijing, China.<br /><searchLink fieldCode="AU" term="%22Zhang+QJ%22">Zhang QJ</searchLink>; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China.; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China.<br /><searchLink fieldCode="AU" term="%22Ma+HP%22">Ma HP</searchLink>; Institute of Wide Bandgap Semiconductors and Future Lighting, College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai, China. hpma@fudan.edu.cn.; Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai, China. hpma@fudan.edu.cn.; Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, China. hpma@fudan.edu.cn.
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  Data: <searchLink fieldCode="JN" term="%22101528555%22">Nature communications</searchLink> [Nat Commun] 2025 Nov 28; Vol. 16 (1), pp. 10723. <i>Date of Electronic Publication: </i>2025 Nov 28.
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