Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga2O3.

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Title: Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga2O3.
Authors: Labed M; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Shin K; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Shaikh MTAS; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Park JH; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Cheon YJ; Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea., Park BI; Department of Semiconductor Science & Technology, Jeonbuk National University, Jeonju 54896, Republic of Korea., Pearton SJ; Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States of America., Rim YS; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.
Source: ACS nano [ACS Nano] 2026 Jan 13; Vol. 20 (1), pp. 849-863. Date of Electronic Publication: 2025 Dec 31.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1936-086X
DOI:10.1021/acsnano.5c15851