Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga2O3.

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Title: Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga2O3.
Authors: Labed M; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Shin K; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Shaikh MTAS; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Park JH; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Cheon YJ; Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea., Park BI; Department of Semiconductor Science & Technology, Jeonbuk National University, Jeonju 54896, Republic of Korea., Pearton SJ; Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States of America., Rim YS; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.
Source: ACS nano [ACS Nano] 2026 Jan 13; Vol. 20 (1), pp. 849-863. Date of Electronic Publication: 2025 Dec 31.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Availability: 0
Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 41474045
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga<subscript>2</subscript>O<subscript>3</subscript>.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Labed+M%22">Labed M</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Shin+K%22">Shin K</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Shaikh+MTAS%22">Shaikh MTAS</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Park+JH%22">Park JH</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Cheon+YJ%22">Cheon YJ</searchLink>; Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Park+BI%22">Park BI</searchLink>; Department of Semiconductor Science & Technology, Jeonbuk National University, Jeonju 54896, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Pearton+SJ%22">Pearton SJ</searchLink>; Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States of America.<br /><searchLink fieldCode="AU" term="%22Rim+YS%22">Rim YS</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22101313589%22">ACS nano</searchLink> [ACS Nano] 2026 Jan 13; Vol. 20 (1), pp. 849-863. <i>Date of Electronic Publication: </i>2025 Dec 31.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101313589 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1936-086X (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219360851%22">19360851 </searchLink><i>NLM ISO Abbreviation: </i>ACS Nano <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=41474045
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1021/acsnano.5c15851
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: 849
    Titles:
      – TitleFull: Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga2O3.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Labed M
      – PersonEntity:
          Name:
            NameFull: Shin K
      – PersonEntity:
          Name:
            NameFull: Shaikh MTAS
      – PersonEntity:
          Name:
            NameFull: Park JH
      – PersonEntity:
          Name:
            NameFull: Cheon YJ
      – PersonEntity:
          Name:
            NameFull: Park BI
      – PersonEntity:
          Name:
            NameFull: Pearton SJ
      – PersonEntity:
          Name:
            NameFull: Rim YS
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 13
              M: 01
              Text: 2026 Jan 13
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-electronic
              Value: 1936-086X
          Numbering:
            – Type: volume
              Value: 20
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: ACS nano
              Type: main
ResultId 1