Polycrystalline InGaO Thin-Film Transistor with SiO2 Gate Insulator for High-Performance Artificial Synapses.
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| Title: | Polycrystalline InGaO Thin-Film Transistor with SiO |
|---|---|
| Authors: | Lim T; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul 02447, South Korea., Lee S; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul 02447, South Korea., Wi H; Division of Electronic and Semiconductor Engineering, Ewha Womans University, Seoul 03760, Republic of Korea., Kwak JY; Division of Electronic and Semiconductor Engineering, Ewha Womans University, Seoul 03760, Republic of Korea., Jang J; Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul 02447, South Korea. |
| Source: | ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2026 Jan 14; Vol. 18 (1), pp. 2056-2068. Date of Electronic Publication: 2026 Jan 05. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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