Ultrathin ZrO2 Seed Layers for Low-Temperature Orthorhombic Ferroelectric Hf1-xZrxO2.

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Title: Ultrathin ZrO2 Seed Layers for Low-Temperature Orthorhombic Ferroelectric Hf1-xZrxO2.
Authors: Kim KJ; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Jo ES; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Labed M; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Venkata Prasad C; Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea., Shaikh MTAS; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Yu MG; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Jeong KM; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Rim YS; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2026 Feb 11; Vol. 18 (5), pp. 8383-8392. Date of Electronic Publication: 2026 Feb 01.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1944-8252
DOI:10.1021/acsami.5c17813