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Ultrathin ZrO2 Seed Layers for Low-Temperature Orthorhombic Ferroelectric Hf1-xZrxO2.

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Title: Ultrathin ZrO2 Seed Layers for Low-Temperature Orthorhombic Ferroelectric Hf1-xZrxO2.
Authors: Kim KJ; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Jo ES; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Labed M; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Venkata Prasad C; Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea., Shaikh MTAS; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Yu MG; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Jeong KM; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea., Rim YS; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2026 Feb 11; Vol. 18 (5), pp. 8383-8392. Date of Electronic Publication: 2026 Feb 01.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
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  Data: Ultrathin ZrO<subscript>2</subscript> Seed Layers for Low-Temperature Orthorhombic Ferroelectric Hf<subscript>1-x</subscript>Zr<subscript>x</subscript>O<subscript>2</subscript>.
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  Data: <searchLink fieldCode="AU" term="%22Kim+KJ%22">Kim KJ</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Jo+ES%22">Jo ES</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Labed+M%22">Labed M</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Venkata+Prasad+C%22">Venkata Prasad C</searchLink>; Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Shaikh+MTAS%22">Shaikh MTAS</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yu+MG%22">Yu MG</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Jeong+KM%22">Jeong KM</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Rim+YS%22">Rim YS</searchLink>; Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.; Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.
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  Data: <searchLink fieldCode="JN" term="%22101504991%22">ACS applied materials & interfaces</searchLink> [ACS Appl Mater Interfaces] 2026 Feb 11; Vol. 18 (5), pp. 8383-8392. <i>Date of Electronic Publication: </i>2026 Feb 01.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101504991 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1944-8252 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219448244%22">19448244 </searchLink><i>NLM ISO Abbreviation: </i>ACS Appl Mater Interfaces <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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              Text: 2026 Feb 11
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