Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability.

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Title: Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability.
Authors: Kim SY; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea., Lee JJ; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea., Hur JS; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea., Kim B; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea., Hong JP; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea., Han SJ; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea., Yeon E; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea., Kim JW; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea., Jeong JK; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea., Hwang DK; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea.; Division of Nanoscience & Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2026 Mar 04; Vol. 18 (8), pp. 13100-13110. Date of Electronic Publication: 2026 Feb 19.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1944-8252
DOI:10.1021/acsami.5c21764