APA (7th ed.) Citation

SY, K., JJ, L., JS, H., B, K., JP, H., SJ, H., . . . DK, H. (2026). Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability. ACS applied materials & interfaces, 18(8), 13100. https://doi.org/10.1021/acsami.5c21764

Chicago Style (17th ed.) Citation

SY, Kim, et al. "Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability." ACS Applied Materials & Interfaces 18, no. 8 (2026): 13100. https://doi.org/10.1021/acsami.5c21764.

MLA (9th ed.) Citation

SY, Kim, et al. "Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability." ACS Applied Materials & Interfaces, vol. 18, no. 8, 2026, p. 13100, https://doi.org/10.1021/acsami.5c21764.