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Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability.

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Title: Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability.
Authors: Kim SY; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea., Lee JJ; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea., Hur JS; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea., Kim B; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea., Hong JP; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea., Han SJ; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea., Yeon E; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea., Kim JW; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea., Jeong JK; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea., Hwang DK; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea.; Division of Nanoscience & Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2026 Mar 04; Vol. 18 (8), pp. 13100-13110. Date of Electronic Publication: 2026 Feb 19.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability.
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  Data: <searchLink fieldCode="AU" term="%22Kim+SY%22">Kim SY</searchLink>; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Lee+JJ%22">Lee JJ</searchLink>; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hur+JS%22">Hur JS</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+B%22">Kim B</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hong+JP%22">Hong JP</searchLink>; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Han+SJ%22">Han SJ</searchLink>; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Yeon+E%22">Yeon E</searchLink>; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Kim+JW%22">Kim JW</searchLink>; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Jeong+JK%22">Jeong JK</searchLink>; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.<br /><searchLink fieldCode="AU" term="%22Hwang+DK%22">Hwang DK</searchLink>; Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea.; Division of Nanoscience & Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea.
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  Data: <searchLink fieldCode="JN" term="%22101504991%22">ACS applied materials & interfaces</searchLink> [ACS Appl Mater Interfaces] 2026 Mar 04; Vol. 18 (8), pp. 13100-13110. <i>Date of Electronic Publication: </i>2026 Feb 19.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101504991 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1944-8252 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219448244%22">19448244 </searchLink><i>NLM ISO Abbreviation: </i>ACS Appl Mater Interfaces <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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        Value: 10.1021/acsami.5c21764
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              Text: 2026 Mar 04
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