| Authors: |
Yu JW; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China., Zhou XQ; Westlake University, Department of Physics, School of Science, Hangzhou 310030, China.; Westlake Institute for Advanced Study, Institute of Natural Sciences, Hangzhou 310024, China., Ni ZB; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China., Cheng XT; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China., Zhao Y; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China., Zhu HH; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.; Zhejiang University, College of Integrated Circuits, Hangzhou 311200, China., Li CH; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.; Zhejiang Lab, Research Institute of Intelligent Computing, Hangzhou 311121, China., Liu F; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China., Jin CY; Zhejiang University, State Key Laboratory of Silicon and Advanced Semiconductor Materials and College of Information Science and Electronic Engineering, Hangzhou 310027, China.; Zhejiang University, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China.; Zhejiang University, College of Integrated Circuits, Hangzhou 311200, China. |
