A Study of the Avalanche Multiplication and Excess Noise in Al x In1-x AsγSb1‑ γ Avalanche Photodiodes Lattice-Matched to GaSb.

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Title: A Study of the Avalanche Multiplication and Excess Noise in Al x In1-x AsγSb1‑ γ Avalanche Photodiodes Lattice-Matched to GaSb.
Authors: Jin X; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K., Zhou W; Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.; China Electric Power Research Institute, Beijing 102209, China., Zhao Y; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K., Tian Q; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K., Yi X; Institute of Photonics and Quantum Sciences, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, U.K., Tao X; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K., Craig A; Department of Physics, University of Lancaster, Lancaster LA1 4WA, U.K., Modak M; Institute of Photonics and Quantum Sciences, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, U.K., Marshall A; Department of Physics, University of Lancaster, Lancaster LA1 4WA, U.K., Xu Y; Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Wang G; Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., David JPR; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, U.K., Buller GS; Institute of Photonics and Quantum Sciences, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, U.K.
Source: ACS photonics [ACS Photonics] 2026 Feb 13; Vol. 13 (5), pp. 1275-1283. Date of Electronic Publication: 2026 Feb 13 (Print Publication: 2026).
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101634366 Publication Model: eCollection Cited Medium: Print ISSN: 2330-4022 (Print) Linking ISSN: 23304022 NLM ISO Abbreviation: ACS Photonics Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:2330-4022
DOI:10.1021/acsphotonics.5c02166