| Authors: |
Chen HY; Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan., Hsu HC; Department of Physics, National Taiwan University, Taipei, Taiwan. hsuhungchang@ntu.edu.tw., Lin LS; Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan., Chen YF; Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan., Lin YR; Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan., Chang YW; Department of Physics, National Taiwan University, Taipei, Taiwan., Liang JY; Department of Physics, National Taiwan University, Taipei, Taiwan., He JY; Department of Physics, National Taiwan University, Taipei, Taiwan., Lee HC; Department of Physics, National Taiwan University, Taipei, Taiwan., Li MY; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan., Radu IP; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan., Chou JP; Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan. jpchou@ntu.edu.tw., Wei CM; Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan. cmw@gate.sinica.edu.tw., Chiu YP; Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan. ypchiu@phys.ntu.edu.tw.; Department of Physics, National Taiwan University, Taipei, Taiwan. ypchiu@phys.ntu.edu.tw.; Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan. ypchiu@phys.ntu.edu.tw.; Institute of Physics, Academia Sinica, Taipei, Taiwan. ypchiu@phys.ntu.edu.tw. |
