Effects of boron and nitrogen doping on the electronic properties of graphene-based heterostructures with two-dimensional semiconducting materials.

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Title: Effects of boron and nitrogen doping on the electronic properties of graphene-based heterostructures with two-dimensional semiconducting materials.
Authors: Liu Z; Chengdu Aeronautic Polytechnic University, Chengdu, China., Huang P; Chengdu Aeronautic Polytechnic University, Chengdu, China., Luo Y; School of Mechanical Engineering, Jiangsu Ocean University, Lianyungang, China., Huang P; Chengdu Aeronautic Polytechnic University, Chengdu, China.
Source: PloS one [PLoS One] 2026 May 08; Vol. 21 (5), pp. e0348086. Date of Electronic Publication: 2026 May 08 (Print Publication: 2026).
Publication Type: Journal Article
Journal Info: Publisher: Public Library of Science Country of Publication: United States NLM ID: 101285081 Publication Model: eCollection Cited Medium: Internet ISSN: 1932-6203 (Electronic) Linking ISSN: 19326203 NLM ISO Abbreviation: PLoS One Subsets: MEDLINE
Database: MEDLINE Ultimate
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ISSN:1932-6203
DOI:10.1371/journal.pone.0348086