APA (7th ed.) Citation

Z, L., P, H., & Y, L. (2026). Effects of boron and nitrogen doping on the electronic properties of graphene-based heterostructures with two-dimensional semiconducting materials. PloS one, 21(5), e0348086. https://doi.org/10.1371/journal.pone.0348086

Chicago Style (17th ed.) Citation

Z, Liu, Huang P, and Luo Y. "Effects of Boron and Nitrogen Doping on the Electronic Properties of Graphene-based Heterostructures with Two-dimensional Semiconducting Materials." PloS One 21, no. 5 (2026): e0348086. https://doi.org/10.1371/journal.pone.0348086.

MLA (9th ed.) Citation

Z, Liu, et al. "Effects of Boron and Nitrogen Doping on the Electronic Properties of Graphene-based Heterostructures with Two-dimensional Semiconducting Materials." PloS One, vol. 21, no. 5, 2026, p. e0348086, https://doi.org/10.1371/journal.pone.0348086.