Electrical Threshold Gain Engineering for High-Speed Direct Modulation in Two-Dimensional Semiconductor Laser.
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| Title: | Electrical Threshold Gain Engineering for High-Speed Direct Modulation in Two-Dimensional Semiconductor Laser. |
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| Authors: | Chen ZZ; Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.; Department of Physics, National Taiwan University, Taipei 10617, Taiwan., Chang CY; Department of Electrical Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan., Lin HT; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States., Shih MH; Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.; Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.; Department of Photonics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan. |
| Source: | ACS nano [ACS Nano] 2026 May 26; Vol. 20 (20), pp. 14543-14551. Date of Electronic Publication: 2026 May 13. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| ISSN: | 1936-086X |
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| DOI: | 10.1021/acsnano.5c22672 |
