Electrical Threshold Gain Engineering for High-Speed Direct Modulation in Two-Dimensional Semiconductor Laser.
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| Title: | Electrical Threshold Gain Engineering for High-Speed Direct Modulation in Two-Dimensional Semiconductor Laser. |
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| Authors: | Chen ZZ; Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.; Department of Physics, National Taiwan University, Taipei 10617, Taiwan., Chang CY; Department of Electrical Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan., Lin HT; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States., Shih MH; Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.; Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.; Department of Photonics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan. |
| Source: | ACS nano [ACS Nano] 2026 May 26; Vol. 20 (20), pp. 14543-14551. Date of Electronic Publication: 2026 May 13. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 42126943 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Electrical Threshold Gain Engineering for High-Speed Direct Modulation in Two-Dimensional Semiconductor Laser. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Chen+ZZ%22">Chen ZZ</searchLink>; Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.; Department of Physics, National Taiwan University, Taipei 10617, Taiwan.<br /><searchLink fieldCode="AU" term="%22Chang+CY%22">Chang CY</searchLink>; Department of Electrical Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan.<br /><searchLink fieldCode="AU" term="%22Lin+HT%22">Lin HT</searchLink>; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.<br /><searchLink fieldCode="AU" term="%22Shih+MH%22">Shih MH</searchLink>; Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.; Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.; Department of Photonics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22101313589%22">ACS nano</searchLink> [ACS Nano] 2026 May 26; Vol. 20 (20), pp. 14543-14551. <i>Date of Electronic Publication: </i>2026 May 13. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22American+Chemical+Society%22">American Chemical Society </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>101313589 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1936-086X (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2219360851%22">19360851 </searchLink><i>NLM ISO Abbreviation: </i>ACS Nano <i>Subsets: </i>MEDLINE; PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=42126943 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1021/acsnano.5c22672 Languages: – Code: eng Text: English PhysicalDescription: Pagination: StartPage: 14543 Titles: – TitleFull: Electrical Threshold Gain Engineering for High-Speed Direct Modulation in Two-Dimensional Semiconductor Laser. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chen ZZ – PersonEntity: Name: NameFull: Chang CY – PersonEntity: Name: NameFull: Lin HT – PersonEntity: Name: NameFull: Shih MH IsPartOfRelationships: – BibEntity: Dates: – D: 26 M: 05 Text: 2026 May 26 Type: published Y: 2026 Identifiers: – Type: issn-electronic Value: 1936-086X Numbering: – Type: volume Value: 20 – Type: issue Value: 20 Titles: – TitleFull: ACS nano Type: main |
| ResultId | 1 |