| Authors: |
Yao H; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States.; SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States., Wang J; SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States.; Department of Applied Physics, Stanford University, Stanford, California 94305, United States., Chen EY; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Karni O; SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States.; Department of Applied Physics, Stanford University, Stanford, California 94305, United States.; Physics & Informatics Laboratory, NTT Research Inc., 940 Stewart Dr., Sunnyvale, California 94085, United States., Haber JB; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Watanabe K; Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan., Taniguchi T; Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan., da Jornada FH; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Heinz TF; SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States.; Department of Applied Physics, Stanford University, Stanford, California 94305, United States. |
