Phonon Signatures of Near-Room-Temperature Phase Transition in Quasi-One-Dimensional Bi4I4 Topological Narrow-Gap Semiconductor.

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Title: Phonon Signatures of Near-Room-Temperature Phase Transition in Quasi-One-Dimensional Bi4I4 Topological Narrow-Gap Semiconductor.
Authors: Thiruthukkal Puthenveettil N; Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States.; California NanoSystems Institute, University of California, Los Angeles, California 90095, United States., Debnath T; Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States., Mantz C; Department of Chemistry, University of Georgia, Athens, Georgia 30602, United States., Ebrahim Nataj Z; Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States.; California NanoSystems Institute, University of California, Los Angeles, California 90095, United States., Teeter J; Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States.; California NanoSystems Institute, University of California, Los Angeles, California 90095, United States., Wright D; Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States.; California NanoSystems Institute, University of California, Los Angeles, California 90095, United States., Hossain MS; Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States.; California NanoSystems Institute, University of California, Los Angeles, California 90095, United States.; Center for Quantum Science and Engineering, University of California, Los Angeles, California 90095, United States., Kargar F; Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, Alabama 36849, United States., Salguero TT; Department of Chemistry, University of Georgia, Athens, Georgia 30602, United States., Lake RK; Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States., Balandin AA; Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States.; California NanoSystems Institute, University of California, Los Angeles, California 90095, United States.; Center for Quantum Science and Engineering, University of California, Los Angeles, California 90095, United States.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2026 Jul 08; Vol. 18 (26), pp. 37284-37298. Date of Electronic Publication: 2026 Jun 24.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1944-8252
DOI:10.1021/acsami.6c07650