| Authors: |
Weng TT; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Wang ST; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Chang YC; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Li KW; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Chung CC; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan., Lo CH; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan., Tseng R; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Chen SC; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Chou TT; National Center for Instrumentation Research, National Institutes of Applied Research, Hsinchu, Taiwan., Hung TYT; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan., Cheng CC; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan., Radu IP; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan., Chueh YL; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan. ylchueh@mx.nthu.edu.tw.; College of Semiconductor Research, National Tsing-Hua University, Hsinchu, Taiwan. ylchueh@mx.nthu.edu.tw.; Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan. ylchueh@mx.nthu.edu.tw.; Department of Materials Science and Engineering, Korea University, Seoul, Republic of Korea. ylchueh@mx.nthu.edu.tw., Lien DH; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan. dhlien@nycu.edu.tw. |
