Elemental Selector for High-Density Memory Integration.
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| Title: | Elemental Selector for High-Density Memory Integration. |
|---|---|
| Authors: | Yuan S; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China., Xuan P; Yangtze Memory Technology Co., Ltd. (YMTC), Wuhan, 430078, People's Republic of China., Xu M; Department of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong, People's Republic of China. mengxu@hku.hk., Xu M; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China. mxu@hust.edu.cn., Miao X; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China. |
| Source: | Nano-micro letters [Nanomicro Lett] 2026 Jul 13; Vol. 18 (1). Date of Electronic Publication: 2026 Jul 13. |
| Publication Type: | Editorial |
| Journal Info: | Publisher: Springer Country of Publication: Germany NLM ID: 101727940 Publication Model: Electronic Cited Medium: Internet ISSN: 2150-5551 (Electronic) Linking ISSN: 21505551 NLM ISO Abbreviation: Nanomicro Lett Subsets: PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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