Binary Ge-Te Chalcogenide as a Toxic-Element-Free Platform for Polarity-Dependent Selector-Only Memory via Composition Engineering.

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Bibliographic Details
Title: Binary Ge-Te Chalcogenide as a Toxic-Element-Free Platform for Polarity-Dependent Selector-Only Memory via Composition Engineering.
Authors: Kim M; Research Institute of Convergence of Basic Science, Department of Physics, Hanyang University, Seoul04763, South Korea., Sim B; Research Institute of Convergence of Basic Science, Department of Physics, Hanyang University, Seoul04763, South Korea., Song S; Research Institute of Convergence of Basic Science, Department of Physics, Hanyang University, Seoul04763, South Korea., Kim DI; Research Institute of Convergence of Basic Science, Department of Physics, Hanyang University, Seoul04763, South Korea., Seo J; Research Institute of Convergence of Basic Science, Department of Physics, Hanyang University, Seoul04763, South Korea., Cho H; Research Institute of Convergence of Basic Science, Department of Physics, Hanyang University, Seoul04763, South Korea., Hong J; School of Materials Science and Engineering, Kookmin University, Seoul02707, South Korea., Hong JP; Research Institute of Convergence of Basic Science, Department of Physics, Hanyang University, Seoul04763, South Korea.; Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul04763, South Korea.
Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2026 Aug 05; Vol. 18 (30), pp. 42053-42065.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
Description
ISSN:1944-8252
DOI:10.1021/acsami.6c07966