APA (7th ed.) Citation

M, K., B, S., S, S., DI, K., J, S., H, C., . . . JP, H. (2026). Binary Ge-Te Chalcogenide as a Toxic-Element-Free Platform for Polarity-Dependent Selector-Only Memory via Composition Engineering. ACS applied materials & interfaces, 18(30), 42053. https://doi.org/10.1021/acsami.6c07966

Chicago Style (17th ed.) Citation

M, Kim, Sim B, Song S, Kim DI, Seo J, Cho H, Hong J, and Hong JP. "Binary Ge-Te Chalcogenide as a Toxic-Element-Free Platform for Polarity-Dependent Selector-Only Memory via Composition Engineering." ACS Applied Materials & Interfaces 18, no. 30 (2026): 42053. https://doi.org/10.1021/acsami.6c07966.

MLA (9th ed.) Citation

M, Kim, et al. "Binary Ge-Te Chalcogenide as a Toxic-Element-Free Platform for Polarity-Dependent Selector-Only Memory via Composition Engineering." ACS Applied Materials & Interfaces, vol. 18, no. 30, 2026, p. 42053, https://doi.org/10.1021/acsami.6c07966.