Modulating Fermi-level pinning and carrier injection efficiency in 2D β-TeO₂/metal van der Waals heterostructure via interlayer distance.
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| Title: | Modulating Fermi-level pinning and carrier injection efficiency in 2D β-TeO₂/metal van der Waals heterostructure via interlayer distance. |
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| Authors: | Lu Y; Hunan University of Science and Technology, Xiangtan 411201, P. R. China, Xiangtan, Hunan, 411201, China., Liu B; Central South University School of Physical Science and Electronics, Changsha 410083, Hunan, P. R. China, Changsha, Hunan, 410083, China., Ding YF; University of South China, Hengyang 421001, P. R. China, Hengyang, Hunan, 421001, China., Zhao Y; School of Physics and Electronics Science, Hunan University of Science and Technology, Hunan University of Science and Technology, Xiangtan, 411201, China., Zhu H; Institute of Microelectronics pf Chinese Academy of Sciences, Beitucheng West Road No.3, Chaoyang, Beijing 100029, China, Beijing, 100029, China., Ma Y; Beijing Institute of Technology, Zhongguancun South Road No. 5, Haidian District, Beijing, Beijing, Beijing, 100081, China. |
| Source: | Journal of physics. Condensed matter : an Institute of Physics journal [J Phys Condens Matter] 2026 Jul 14. Date of Electronic Publication: 2026 Jul 14. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: IOP Pub Country of Publication: England NLM ID: 101165248 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1361-648X (Electronic) Linking ISSN: 09538984 NLM ISO Abbreviation: J Phys Condens Matter Subsets: MEDLINE |
| Database: | MEDLINE Ultimate |
| ISSN: | 1361-648X |
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| DOI: | 10.1088/1361-648X/ae8a9f |
