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Modulating Fermi-level pinning and carrier injection efficiency in 2D β-TeO₂/metal van der Waals heterostructure via interlayer distance.

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Title: Modulating Fermi-level pinning and carrier injection efficiency in 2D β-TeO₂/metal van der Waals heterostructure via interlayer distance.
Authors: Lu Y; Hunan University of Science and Technology, Xiangtan 411201, P. R. China, Xiangtan, Hunan, 411201, China., Liu B; Central South University School of Physical Science and Electronics, Changsha 410083, Hunan, P. R. China, Changsha, Hunan, 410083, China., Ding YF; University of South China, Hengyang 421001, P. R. China, Hengyang, Hunan, 421001, China., Zhao Y; School of Physics and Electronics Science, Hunan University of Science and Technology, Hunan University of Science and Technology, Xiangtan, 411201, China., Zhu H; Institute of Microelectronics pf Chinese Academy of Sciences, Beitucheng West Road No.3, Chaoyang, Beijing 100029, China, Beijing, 100029, China., Ma Y; Beijing Institute of Technology, Zhongguancun South Road No. 5, Haidian District, Beijing, Beijing, Beijing, 100081, China.
Source: Journal of physics. Condensed matter : an Institute of Physics journal [J Phys Condens Matter] 2026 Jul 14. Date of Electronic Publication: 2026 Jul 14.
Publication Type: Journal Article
Journal Info: Publisher: IOP Pub Country of Publication: England NLM ID: 101165248 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1361-648X (Electronic) Linking ISSN: 09538984 NLM ISO Abbreviation: J Phys Condens Matter Subsets: MEDLINE
Database: MEDLINE Ultimate
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DbLabel: MEDLINE Ultimate
An: 42447909
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Modulating Fermi-level pinning and carrier injection efficiency in 2D β-TeO₂/metal van der Waals heterostructure via interlayer distance.
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  Data: <searchLink fieldCode="AU" term="%22Lu+Y%22">Lu Y</searchLink>; Hunan University of Science and Technology, Xiangtan 411201, P. R. China, Xiangtan, Hunan, 411201, China.<br /><searchLink fieldCode="AU" term="%22Liu+B%22">Liu B</searchLink>; Central South University School of Physical Science and Electronics, Changsha 410083, Hunan, P. R. China, Changsha, Hunan, 410083, China.<br /><searchLink fieldCode="AU" term="%22Ding+YF%22">Ding YF</searchLink>; University of South China, Hengyang 421001, P. R. China, Hengyang, Hunan, 421001, China.<br /><searchLink fieldCode="AU" term="%22Zhao+Y%22">Zhao Y</searchLink>; School of Physics and Electronics Science, Hunan University of Science and Technology, Hunan University of Science and Technology, Xiangtan, 411201, China.<br /><searchLink fieldCode="AU" term="%22Zhu+H%22">Zhu H</searchLink>; Institute of Microelectronics pf Chinese Academy of Sciences, Beitucheng West Road No.3, Chaoyang, Beijing 100029, China, Beijing, 100029, China.<br /><searchLink fieldCode="AU" term="%22Ma+Y%22">Ma Y</searchLink>; Beijing Institute of Technology, Zhongguancun South Road No. 5, Haidian District, Beijing, Beijing, Beijing, 100081, China.
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  Data: <searchLink fieldCode="JN" term="%22101165248%22">Journal of physics. Condensed matter : an Institute of Physics journal</searchLink> [J Phys Condens Matter] 2026 Jul 14. <i>Date of Electronic Publication: </i>2026 Jul 14.
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        Value: 10.1088/1361-648X/ae8a9f
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      – TitleFull: Modulating Fermi-level pinning and carrier injection efficiency in 2D β-TeO₂/metal van der Waals heterostructure via interlayer distance.
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              Text: 2026 Jul 14
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