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Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices.

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Title: Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices.
Authors: Pyngrope, Dariskhem1 (AUTHOR), Majumdar, Shubhankar1 (AUTHOR) shubuit@gmail.com, Crupi, Giovanni2 (AUTHOR)
Source: International Journal of Numerical Modelling. Mar2024, Vol. 37 Issue 2, p1-11. 11p.
Database: Mathematics Source
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ISSN:08943370
DOI:10.1002/jnm.3206