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Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices.

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Title: Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices.
Authors: Pyngrope, Dariskhem1 (AUTHOR), Majumdar, Shubhankar1 (AUTHOR) shubuit@gmail.com, Crupi, Giovanni2 (AUTHOR)
Source: International Journal of Numerical Modelling. Mar2024, Vol. 37 Issue 2, p1-11. 11p.
Database: Mathematics Source
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An: 176649741
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices.
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  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Numerical+Modelling%22">International Journal of Numerical Modelling</searchLink>. Mar2024, Vol. 37 Issue 2, p1-11. 11p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=msf&AN=176649741
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1002/jnm.3206
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 11
        StartPage: 1
    Titles:
      – TitleFull: Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices.
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            NameFull: Pyngrope, Dariskhem
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            NameFull: Majumdar, Shubhankar
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            NameFull: Crupi, Giovanni
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            – D: 01
              M: 03
              Text: Mar2024
              Type: published
              Y: 2024
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              Value: 37
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            – TitleFull: International Journal of Numerical Modelling
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