Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors.
Saved in:
| Title: | Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors. |
|---|---|
| Authors: | Sharbati, Samaneh1, sharbati@sdu.dk, Gharibshahian, Iman2, Ebel, Thomas1, Orouji, Ali A.2, Franke, Wulf-Toke1 |
| Source: | Journal of Electronic Materials; Jul2021, Vol. 50 Issue 7, p3923-3929, 7p |
| Database: | Applied Science & Technology Source |
Be the first to leave a comment!
