Capacitance and doping profiles of ion-implanted, buried-channel MOSFETs.
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| Title: | Capacitance and doping profiles of ion-implanted, buried-channel MOSFETs. |
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| Authors: | Lubberts, G., Burkey, B. C. |
| Source: | Solid-State Electronics; January 1979, Vol. 22, p47-54, 8p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 517133708 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Capacitance and doping profiles of ion-implanted, buried-channel MOSFETs. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Lubberts%2C+G%2E%22">Lubberts, G.</searchLink><br /><searchLink fieldCode="AU" term="%22Burkey%2C+B%2E+C%2E%22">Burkey, B. C.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; January 1979, Vol. 22, p47-54, 8p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=517133708 |
| RecordInfo | BibRecord: BibEntity: Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 47 Titles: – TitleFull: Capacitance and doping profiles of ion-implanted, buried-channel MOSFETs. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Lubberts, G. – PersonEntity: Name: NameFull: Burkey, B. C. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: January 1979 Type: published Y: 1979 Identifiers: – Type: issn-print Value: 00381101 Numbering: – Type: volume Value: 22 Titles: – TitleFull: Solid-State Electronics Type: main |
| ResultId | 1 |